OMH315 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – DUAL, LOW VOLTAGE, LOW RDS(on), MOSFET H-BRIDGE CIRCUIT IN A PLASTIC PACKAGE

DUAL, LOW VOLTAGE, LOW R_DS(on), MOSFET
H-BRIDGE CIRCUIT IN A PLASTIC PACKAGE
Dual 50 Volt, 15 And 20 Amp H-Bridge
With Current And Temperature Sensing
In A Low Profile Plastic Package
OMH310
OMH315
FEATURES
• H-Bridge Configuration
• Zener Gate Protection
• 10 m Shunt Resistor
• 2 Linear Thermal Sensors, One For Each Bridge
• Isolated Package
• Output Currents Up To 20 Amps
DESCRIPTION
This series of MOSFET switches is configured as a Dual H-Bridge with common V_DD
lines, precision series shunt resistor in the source line, and sensing elements to
monitor the substrate temperature of each switch. This device is ideally suited for
Stepping Motor Control applications where size, performance, and efficiency are key.
2.1
MAXIMUM RATINGS ^(T_C ^{= @ 25°C)}
Part
Number
V_DS
(Volts)
R_DS(on)
(m )
OMH310
50
100
OMH315
50
70
I_D
(Amps)
15
20
Package
MP-3
MP-3
ABSOLUTE MAXIMUM RATINGS ^(T_C ^{= @ 25°C unless otherwise noted)}
Parameter
OMH310 OMH315 Units
Drain Source Voltage, V_DS
50
Drain-Gate (R_GS = 1m ), V_DGR
50
Continuous Drain Current, I_D @ T_C = 25°C
15
Continuous Drain Current, I_D @ T_C = 70°C
11
Pulse Drain Current, I_DM ⁽¹⁾
56
Maximum Power Dissipation, P_D @ T_C = 25°C ⁽²⁾
20
Maximum Power Dissipation, P_D @ T_C = 70°C ⁽²⁾
11
Linear Derating Factor, Junction-To-Case
0.2
50
V
50
V
25
A
16
A
100
A
50
W
18
W
0.33
W/C
Thermal Resistance, Junction-To-Case
5.0
3.0
°C/W
Notes:
(1) Pulse Test: Pulse width 300 sec. Duty Cycle 1.5%. (2) Maximum Junction Temperature = 125°C.
4 11 R0
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