OHT10CB Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Photo transistors

OHT10CB
Photo transistors
The OHT10CB is a high-sensitivity NPN silicon phototransistor
mounted in durable, hermetically sealed TO-18 metal can which provide years
of reliable performance, even under demanding conditions such as use outdoors.
FEATURES
● Narrow angular response
● Durable
● High reliability in demanding environments
● Two leads( Collector, Emitter )
APPLICATIONS
● Optical counters
● Optical detectors
● Infrared sensors
● Encoders
● Smoke detectors
ELECTRO-OPTICAL CHARACTERISTICS
Item
Collector dark current
Light current
C-E saturation voltage
Rise time
Switching speeds
Fall time
Spectral sensitivity
Peak wavelenght
Half angle
Symbol
ICEO
IL
Vce(sat)
tr
tf
λ
λp
Δθ
Cond.
VCEO=10V
VCE=10v,200Lux
Ic=5㎃,2000Lux
Vcc=10v,Ic=5㎃
RL=100Ω
Min.
1.5
MAXIMUM RATINGS
Item
Symbol
Rating
C-E voltage
VCEO
40
E-C voltage
VECO
4
Collector current
Ic
50
Collector power dissipation
PD
150
Operating temp.
Topr.
-30∼+125
Storage temp.
Tstg.
-50∼+150
Soldering temp.⁽¹⁾
Tsol.
260
(1)For MAX.5seconds at the position of 2mm from the package
( Ta=25℃ )
Typ.
Max.
Unit
1
200
㎁
6.0
16
㎃
0.2
0.4
8.0
10
500~1,050
V
usec.
usec.
㎚
880
㎚
±15
deg.
(Ta=25℃)
Unit
V
V
㎃
mW
℃
℃
℃
1
OPTO HiTEC.Co.,Ltd.