OD880F Datasheet, PDF (1/2 Pages) OptoDiode Corp – HIGH-POWER GaAlAs IR EMITTERS

HIGH-POWER GaAlAs IR EMITTERS
OD-880F
GLASS
DOME
.183 .152
.186 .154
.030
.040
1.00
MIN.
ANODE
(CASE)
.209
.015
.212
.100
.017
FEATURES
• High reliability liquid-phase epitaxially grown GaAlAs
• 880nm peak emission for optimum matching with
ODD-45W photodiode
• Wide range of linear power output
• Hermetically sealed TO-46 package
.041 ^{• Narrow angle for long distance applications}
• OD-880F1 selected to meet minimum radiant intensity
CATHODE
.036
.197
45°
.205
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Window
caps are welded to the case.
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
TEST CONDITIONS
MIN
Total Power Output, P_o
OD-880F
OD-880F1
I_F = 100mA
15
Radiant Intensity, I_e
OD-880F
OD-880F1
120
Peak Emission Wavelength, λ_P
Spectral Bandwidth at 50%, ∆λ
I_F = 50mA
Half Intensity Beam Angle, θ
Forward Voltage, V_F
Reverse Breakdown Voltage, V_R
Capacitance, C
I_F = 100mA
I_R = 10µA
5
V_R = 0V
Rise Time
Fall Time
TYP
17
8
135
160
880
80
8
1.55
30
17
0.5
0.5
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation¹
Continuous Forward Current
Peak Forward Current (10µs, 400Hz)²
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
1Derate _{per Thermal Derating Curve above 25°C}
2Derate _{linearly above 25°C}
190mW
100mA
3A
5V
240°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
Maximum Junction Temperature
Thermal Resistance, R_THJA1
Thermal Resistance, R_THJA2
-55°C to 100°C
100°C
350°C/W Typical
115°C/W Typical
1Heat _{transfer minimized by measuring in still air with minimum heat conducting through leads}
2Air _{circulating at a rapid rate to keep case temperature at 25°C}
MAX
1.9
UNITS
mW
mW/sr
nm
nm
Deg
Volts
Volts
pF
µsec
µsec
750 Mitchell Road, Newbury Park, California 91320
Phone: [phone] Fax: [phone]
Email: [e-mail] Web Site: www.optodiode.com
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