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OD-880L Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – HIGH-POWER GaAlAs IR EMITTERS
HIGH-POWER GaAlAs IR EMITTERS
OD-880L
GLASS
DOME
1.00
MIN.
ANODE
(CASE)
.015
.209
.220
.183 .152
.186 .156
.024
.043
.100
.017
CATHODE
.143
.150
.041
.036
45°
FEATURES
• High reliability liquid-phase epitaxially grown GaAlAs
• 880nm peak emission for optimum matching with
ODD-45W photodiode
• Wide range of linear power output
• Hermetically sealed TO-46 package
• Medium emission angle for best coverage/power
density
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Window
caps are welded to the case.
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, Po
Radiant Intensity, Ie
Peak Emission Wavelength, λP
Spectral Bandwidth at 50%, ∆λ
TEST CONDITIONS
MIN
IF = 100mA
18
IF = 50mA
Half Intensity Beam Angle, θ
Forward Voltage, VF
Reverse Breakdown Voltage, VR
Capacitance, C
Rise Time
IF = 100mA
IR = 10µA
5
VR = 0V
Fall Time
TYP
20
50
880
80
35
1.55
30
17
0.5
0.5
MAX
1.9
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation1
Continuous Forward Current
Peak Forward Current (10µs, 400Hz)2
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
190mW
100mA
3A
5V
240°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
-55°C TO 100°C
Maximum Junction Temperature
Thermal Resistance, RTHJA1
Thermal Resistance, RTHJA2
100°C
400°C/W Typical
135°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
UNITS
mW
mW/sr
nm
nm
Deg
Volts
Volts
pF
µsec
µsec
OPTO DIODE CORP.
750 Mitchell Road, Newbury Park, California 91320
Phone (805) 499-0335 FAX (805) 499-8108
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