MX26L12811MC Datasheet, PDF (1/32 Pages) List of Unclassifed Manufacturers – 128M [x8/x16] SINGLE 3V PAGE MODE MTP MEMORY

MX26L12811MC
128M [x8/x16] SINGLE 3V PAGE MODE MTP MEMORY
FEATURES
• 3.0V to 3.6V operation voltage
• Block Structure
- 128 x 128Kbyte Erase Blocks
• Fast random / page mode access time
- 120/25 ns Read Access Time (page depth:4-word)
• 32-Byte Write Buffer
- 6 us/byte Effective Programming Time
Performance
• Low power dissipation
- typical 15mA active current for page mode read
- 80uA/(max.) standby current
• High Performance
- Block erase time: 2s typ.
- Byte programming time: 210us typ.
- Block programming time: 0.8s typ. (using Write to
Buffer Command)
• Program/Erase Endurance cycles: 10 cycles
Packaging
- 44-Lead SOP
Technology
- Nbit (0.25u) MTP Technology
GENERAL DESCRIPTION
The MXIC's MX26L12811MC series MTP use the most
advance 2 bits/cell Nbit technology, double the storage
capacity of memory cell. The device provide the high
density MTP memory solution with reliable performance
and most cost-effective.
The device organized as by 8 bits or by 16 bits of output
bus. The device is packaged in 44-Lead SOP. It is de-
signed to be reprogrammed and erased in system or in
standard EPROM programmers.
The device offers fast access time and allowing opera-
tion of high-speed microprocessors without wait states.
The device augment EPROM functionality with in-circuit
electrical erasure and programming. The device uses a
command register to manage this functionality.
The MXIC's Nbit technology reliably stores memory con-
tents even after the specific erase and program cycles.
The MXIC cell is designed to optimize the erase and
program mechanisms by utilizing the dielectric's charac-
ter to trap or release charges from ONO layer.
The device uses a 3.0V to 3.6V VCC supply to perform
the High Reliability Erase and auto Program/Erase algo-
rithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
P/N:PM0990
REV. 1.0, OCT. 29, 2003
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