MTP3N55 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – HIGH VOLTAGE POWER MOSFET N-CHANNEL

PRODUCT SPECIFICATIONS
SEMICONDUCTOR TECHNOLOGY, INC.
3131 S. E. JAY STREET, STUART, FL 34997
PH: [phone] FAX: [phone]
Website: http://www.semi-tech-inc.com
CASE OUTLINE: TO-220
HIGH VOLTAGE POWER MOSFET
N-CHANNEL
ABSOLUTE MAXIMUM RATING:
Drain – Source Voltage
VDSS
Drain – Gate Voltage
VDGR
Drain Current – Continuous
ID
Drain Current – Pulsed
ID _M
Gate – Source Voltage
VGS
Power Dissipation
PD
Inductive Current
IL
Operating and Storage Temperature
TJ & Tstg
Lead Temperature From Case
TL
ELECTRICAL CHARACTERISTICS TA @ 25°C
Parameters
Symbol Test Conditions
Drain Source
Breakdown Voltage
BVDSS ID = .25mA
Gate Threshold Voltage VGS(th) ID = 1.0mA
ID = 1.0mA, TJ = 100°C
Gate – Body Leakage
Current
IGSS
VGS = 20V
Zero Gate Voltage
Drain Current
IDSS
VDS = 550V
VDS = 440V, TJ = 125°C
On State Drain Current ID(on)
Drain Source On
Resistance
Forward
Transconductance
Drain-Source On-
Voltage
Drain Source On-
Voltage
Input Capacitance
rDS(on) ID = 1.5A, VGS = 10V,
gFS
ID = 1.5A, VDS = 15V,
VDS(on)
VDS(on)
ID = 3.0A VGS = 10V
ID = 1.5A, VGS = 10V TJ = 100°C
Ciss
Output Capacitance
Coss
VDS = 25V, f = 1 MHz
Reverse Transfer
Capacitance
Crss
TYPE:
MTP3N55
550
550
3.0
10
±20
75
-65 to +150
275
Vdc
Vdc
Adc
Adc
Vdc
Watts
Adc
°C
°C
Min Typ Max Unit
550
Vdc
2.0
4.5 Vdc
1.5
4.0
100 nA
0.2 mA
1.0 mA
Adc
2.5 Ohms
1.5
mhos
9.0 Vdc
7.5 Vdc
Vdc
1000 pF
300 pF
80 pF
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