MPS4356 Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – PNP SILICON PLANAR EPITAXIAL TRANSISTOR

Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTOR
MPS4356
TO-92
Plastic Package
EBC
General Purpose Amplifier
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation @ T_a=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
P_D
T_j, T_stg
VALUE
80
80
5.0
800
625
5.0
- 55 to +150
THERMAL CHARACTERISTICS
Junction to Case
Junction to Ambient in free air
R_{th (j-c)}
R_{th (j-a)}
83.3
200
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Voltage
*V_CEO
I_C=10mA, I_B=0
Collector Base Voltage
Emitter Base Voltage
Collector Cut Off Current
V_CBO
V_EBO
I_CBO
I_C=10µA, I_E=0
I_E=10µA, I_C=0
V_CB=50V, I_E = 0
V_CB=50V, I_E=0, T_a=75ºC
Emitter Cut Off Current
I_EBO
V_EB=4V, I_C = 0
DC Current Gain
*h_FE
V_CE=10V, I_C=100µA
V_CE=10V, I_C=1mA
V_CE=10V, I_C=10mA
V_CE=10V, I_C=100mA
V_CE=10V, I_C=500mA
Collector Emitter Saturation Voltage *V_{CE (sat)}
I_C=150mA, I_B=15mA
I_C=500mA, I_B=50mA
Base Emitter Saturation Voltage
*V_{BE (sat)}
I_C=150mA, I_B=15mA
I_C=500mA, I_B=50mA
*Pulse test pulse width<300µs, duty cycle <2%
MPS4356Rev180303E
MIN TYP
80
80
5
25
40
50
40
30
MAX
50
5.0
100
250
0.15
0.50
0.90
1.10
UNITS
V
V
V
mA
mW
mW/ºC
ºC
ºC/W
ºC/W
UNITS
V
V
V
nA
µA
nA
V
V
V
V
Continental Device India Limited
Data Sheet
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