MMBT6027 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – Silicon programmable unijunction transistor (PUTs)

MMBT6027
Silicon programmable unijunction transistor (PUT′s)
in package SOT-23
0.5 max
3
1.2 max
1
1.9
3.1 max
2
Pinouts:
1- Anode, 2- Cathode, 3- Gate
Symbol
V_AK
V_GKF
V_GKR
V_GAR
I_T
I_TRM
P_T
Ratings (T _A = 25°C)
Parameter, units
*Anode to cathode voltage, V
*Gate to cathode forward voltage, V
*Gate to cathode reverse voltage, V
*Gate to anode reverse voltage, V
*DC forward anode current, mA
Repetitive peak forward current, A
100µs Pulse width, 1% duty cycle
*20µs Pulse width, 1% duty cycle
*Power dissipation, mW
* - Anode positive, R_GA =1000Ω;
Anode negative, R_GA=open
Limits
±40
40
-5
40
150
1
2
300
Symbol
I_P
I_GAO
I_GKS
V_F
V_O
V_T
I_V
t_R
Electrical Characteristics (T _A = 25°C)
Parameter, units,
Limits
test conditions
min typ
Peak current, µA,
V_S=10V, R_G=10kΩ
Gate to anode leakage current, nA,
V_S=40V, cathode open
Gate to cathode leakage current, nA,
V_S=40V, anode to cathode shorted
Forward voltage, V,
I_F=50mA Peak
Peak output voltage, V,
V_G=20V, C_C=0.2 µF
Offset voltage, V
V_S=10V, R_G=10kΩ
Valley current, µA,
V_S=10V, R_G=10kΩ
Pulse voltage rise time, ns
U_B=20V, C_C =0.2 µF
6
0.2
70
4
1
5
0.8
11
0.35
150
40
max
5
10
50
1.5
0.6
80
Planeta
Electronic company
JSC Planeta, 2/13, Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia
Ph/Fax: [phone], 3-32-86 E-mail: [e-mail]
http://www.planetasemi.com