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MMBT404ALT1 Datasheet, PDF (1/2 Pages) Motorola, Inc – Chopper Transistor | |||
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Chopper Transistor
PNP Silicon
1
BASE
3
COLLECTOR
2
EMITTER
MAXIMUM RATINGS
Rating
CollectorâEmitter Voltage
CollectorâBase Voltage
EmitterâBase Voltage
Collector Current â Continuous
Symbol
V CEO
V CBO
V EBO
IC
Value
â 35
â 40
â 25
â 150
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,(1)
T A =25 °C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
417
â55 to +150
mW/°C
°C/W
°C
DEVICE MARKING
MMBT404ALT1 = 2N
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
CollectorâEmitter Breakdown Voltage
(I C = â10 mAdc, I B = 0)
Collectorâ Emitter Breakdown Voltage
(I C = â10 µAdc, I E = 0)
EmitterâBase Breakdown Voltage
(I E = â10 µAdc, I C = 0)
Collector Cutoff Current
(V CE = â10Vdc, I E = 0)
Emitter Cutoff Current
(V EB= â10Vdc, I C = 0)
1. FRâ5 = 1.0 x 0.75 x 0.062 in.
V (BR)CEO
â 35
â
V (BR)CBO
â 40
â
V (BR)EBO
â 25
â
I CBO
â
â
I EBO
â
â
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
MMBT404ALT1
3
1
2
CASE 318â08, STYLE 6
SOTâ 23 (TOâ236AB)
Max
Unit
â
â
â
â100
â100
Vdc
Vdc
Vdc
nAdc
nAdc
O1â1/2
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