MJ2501 Datasheet, PDF (1/4 Pages) ON Semiconductor – DARLINGTON POWER TRANSISTOR COMPLEMENTARY SILICON

MJ2501 & MJ3001
10A, 150W, 80V
Features:
• Medium-power complementary Silicon Transistors for use as output devices in
complementary general purpose amplifier applications.
• High DC Current Gain
h_FE = 1000 (Typical) at I_C = 5.0A.
• Monolithic construction with built Base-Emitter Shunt Resistors.
Pin 1. Base
2. Emitter
Collector(Case)
Dimensions
A
B
C
D
E
F
G
H
I
J
K
Minimum
Maximum
38.75
19.28
7.96
11.18
25.20
0.92
1.38
29.90
16.64
3.88
10.57
39.96
22.23
9.28
12.19
26.67
1.09
1.62
30.40
17.30
4.36
11.16
Dimensions : Millimetres
PNP NPN
MJ2501 MJ3001
10 Ampere
Darlington
Power Transistors
Complementary Silicon
80 Volts
150 Watts
TO-3
Maximum Ratings
Characteristic
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
-Peak
Base Current
Total Power Dissipation at T_C = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol
V_CEO
V_CEX
V_EBO
I_C
I_B
P_D
T_J, T_STG
MJ2501/MJ3001
80
5.0
10
12
0.2
150
0.857
-55 to +200
Unit
V
A
W
W/°C
°C
Page 1
31/05/05 V1.0