MGA-425P8 Datasheet, PDF (1/15 Pages) List of Unclassifed Manufacturers – GaAs Enchancement-mode PHEMT Power Amplifier in 2x2 mm2 LPCC Package

Agilent MGA-425P8
GaAs Enchancement-mode
PHEMT Power Amplifier in
2x2 mm² LPCC Package
Data Sheet
Description
Agilent Technologies’s MGA-425P8
power amplifier is designed for
wireless application in the
2–10 GHz frequency range. The PA
has a high power efficiency (PAE)
achieved through the use of Agilent
Technologies’s proprietary GaAs
Enhancement-mode pHEMT process.
MGA-425P8 is housed in a miniature
2.0 x 2.0 x 0.75 mm 8-lead leadless-
plastic-chip-carrier (LPCC) package.
The compact footprint, low profile
couple with the excellent thermal
efficiency of the LPCC package
makes the MGA-425P8 an ideal
choice as power amplifier that saves
board space.
On-chip bias circuitry allows
operation from a single +3.3V
power supply. The output of the
amplifier is near to 50Ω (below 2:1
VSWR) around 4.9–5.8 GHz. This
makes MGA-425P8 an ideal choice
as power amplifier for broadband
IEEE 802.11a system as well as
other high performance wireless
application in the 2–10 GHz
frequency range.
One external resistor (RBias) is
used to set the bias current of the
device over a wide range.
This allows the designer to use the
same part in several circuit posi-
tions and tailor the output power/
linearity performance, and current
consumption, to suit each position.
Pin Connections and
Package Marking
2.0 x 2.0 x 0.75 mm 8-lead LPCC
Pin 1 (NC)
Pin 8 (NC)
Pin 2 (RFin)
Pin 3 (NC)
2YX
Pin 7 (RFout, VD)
Pin 6 (NC)
Pin 4 (NC)
Pin 5 (RBias)
Top View
Note:
Package marking provides orientation and
identification
“2Y” = Device Code
“X” = Data code indicates the month of
manufacture.
Pin 1 (NC)
Pin 2 (RFin)
Pin 3 (NC)
Pin 4 (NC)
GND
Pin 8 (NC)
Pin 7 (RFout, VD)
Pin 6 (NC)
Pin 5 (RBias)
Bottom View
Note:
Use Die Attach Padded for electrical grounding
and thermal dissipation
Simplified Schematic
Rbias
Vbias
5
2
Ibias
Bias
Vd
Id=Ids + Ibias
Ids
7
1, 3, 4, 6, 8
Features
• Near 50Ω broadband output match
• Single +3.3V supply
• High Gain & OIP3
• Miniature 2 x 2 x 0.75 mm
LPCC package
• Pb-free & MSL-1 package
• Tape-and-Reel packaging
option available
Specifications
at 5.25 GHz, 3.3V, 58 mA (typ)
• 13.3 dBm Linear Pout @ 5% EVM
• 10.3% PAE @ +13.3 dBm Pout
• 12 dBm Linear Pout @ 3% EVM
• 7.6% PAE @ + 12 dBm Pout
• 47% PAE @ P1dB
• 20.3 dBm P1dB
• 32.9 dBm OIP3
• 16 dB Gain
• 1.7 dB NF
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1A)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.