MBT5401 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – SILICON P-N-P HIGH-VOLTAGE TRANSISTOR

MBT5401
MBT5401
SILICON P-N-P HIGH-VOLTAGE TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
Descriptions
Storage Temperature
Junction Temperature
Maximum Power Dissipation (Ta=25 C)
Maximum Collector to Base Voltage
Maximum Collector to Emitter Voltage
Maximum Emitter to Base Voltage
Maximum Collector Current
Symbol
T_stg
T_j
P_tot
V_CBO
V_CEO
V_EBO
I_C
Min. Typ. Max. Unit
55
150 C
150 C
250 mW
160 V
150 V
5
V
500 mA
1
3
2
1. BASE
3. EMITTER
2. COLLECTOR
Type
Color Code
Marking
SOT-23
Black
MBT5401
ELECTRICAL CHARACTERISTICS ^(Ta 25C)
Descriptions
DC Current Gain
Gain Bandwidth product
Output Capacitance
Collector Cut-off Current
Collector Saturation Voltage
Base Saturation Voltage
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Small-Signal Current Gain
Pulse Test 300 S, Duty Cycle. 2%
Test Conditions
V_CE 5V, I_C 1mA
V_CE 5V, I_C 10mA
V_CE 5V, I_C 50mA
V_CE 10V, I_C 10mA
V_CB 10V, I_E 0mA, f 1MHz
V_CB 120V, I_E 0mA
V_CB 120V, I _E 0mA, T_amb 150 C
I_C 10mA, I_B 1mA
I_C 50mA, I_B 5mA
I _C 10mA, I_B 1mA
I_C 50mA, I_B 5mA
I_C 100uA I_E 0
I_C 1mA, I_B 0
I_C 0mA, I_E 10uA
V_CB 10V, I _E 1mA, f 1kHz
Symbol
h_FE1
h_FE2
h_FE3
f_T
C_ob
I_CBO
V _CE(Sat)
V _BE(Sat)
BV_CBO
BV_CEO
BV_EBO
h_fe
Min.
50
60
50
100
160
150
5
40
Typ.
Max.
240
Unit
MHz
8.0
P^F
50
uA
50
uA
0.2
V
0.5
V
1
V
1
V
V
V
V
200
THERMAL CHARACTERISTICS
Descriptions
Thermal Resistance at Tj P(Rth j-t+Rth t-s+Rth s-a) +Tamb
Symbol
R th j-a
Min.
Typ.
500
Max.
Unit
K/W
P / N MBT5401
Marking
2L
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