MBT3906DW Datasheet, PDF (1/6 Pages) List of Unclassifed Manufacturers – Dual General Purpose Transistor PNP+PNP Silicon

Dual General Purpose Transistor
PNP+PNP Silicon
* “G” Lead(Pb)-Free
Maximum Ratings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Thermal Characteristics
Characteristics
Total Device Dissipation TA=25 C ⁽¹⁾
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
Device Marking
MBT3906DW=A2
Symbol
VCEO
VCBO
VEBO
IC
Symbol
PD
R _{θ JA}
TJ,Tstg
MBT3906DW
3
2
1
4
5
6
PNP+PNP
6 ₅₄
1
23
SOT-363(SC-88)
Value
-40
-40
-5.0
-200
Unit
Vdc
Vdc
Vdc
mAdc
Max
Unit
150
mW
833
C/W
-55 to +150
C
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Min
Max
Unit
Off Characteristics
Collector-Emitter Breakdown Voltage⁽²⁾ (IC=-1.0mAdc.IB=0)
V(BR)CEO
-40
-
Collector-Base Breakdown Voltage (IC=-10 uAdc, IE=0)
V(BR)CBO
-40
-
Emitter-Base Breakdown Voltage (IE=-10 uAdc, IC=0)
V(BR)EBO
-5.0
-
Base Cutoff Current (VCE=-30 Vdc, VEB =-3.0 Vdc)
IBL
-
-50
Collector Cutoff Current (VCE=-30Vdc, VEB=-3.0Vdc)
ICEX
-
-50
1.Decice Mounted on FR4 glass epoxy printed circuit board using the minimun recommended foot print.
2.Pulse Test:Pluse Width<=300 µS, Duty Cycle<=2.0%.
Vdc
Vdc
Vdc
nAdc
nAdc
WEITRON
http://www.weitron.com.tw