MBR3100 Datasheet, PDF (1/1 Pages) ON Semiconductor – SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES 100 VOLTS

Micro-Electro-Magnetical Tech Co.
SCHOTTKY DIE SPECIFICATION
General Description: 100 V 3 A ( Low Ir)
TYPE: MBR3100
Single Anode
ELECTRICAL CHARACTERISTICS
DC Blocking Voltage: Ir=1mA(for wafer form)
Ir=0.5mA (for dice form)
Average Rectified Forward Current
Maximum Instantaneous Forward Voltage
@ 3 Amperes, Ta=25°C
SYM
VRRM
IFAV
VF MAX
Spec. Limit
100
3
0.76
Maximum Instantaneous Reverse Voltage
VR= 100 Volt, Ta=25°C
IR MAX
0.1
Maximum Junction Capacitance @ 0V, 1MHZ
MAXIMUM RATINGS
Nonrepetitive Peak Surge Current
Operating Junction Temperature
Storage Temperatures
Cj MAX
IFSM
Tj
TSTG
80
-65 to +125
-65 to +125
Specification apply to die only. Actual performance may degrade when assembled.
MEMT does not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.
DICE OUTLINE DRAWING
Die Sort UNIT
105 Volt
Amp
0.75 Volt
0.09 mA
pF
Amp
°C
°C
A
C
B
Top-side Metal
SiO2 Passivation
D
P⁺ Guard Ring
Back-side Metal
DIM
ITEM
um²
Mil²
A Die Size
1524 60.00
B Top Metal Pad Size 1424 56.1
C Passivation Seal
1444 56.9
D Thickness (Min)
254
10
Thickness (Max)
305
12
PS:
(1)Cutting street width is around 80um(3.14mil).
(2)Both of top-side and back-side metals are Ti/Ni/Ag.