M5M29GB640VP Datasheet, PDF (1/42 Pages) List of Unclassifed Manufacturers – 3.3V ONLY FLASHMEMORY

M5M29GB640VP
FEATURES
FEATURES
• Single power supply operation
- 3.0V only operation for read, erase and program
operation
- VCC=VPP=2.7~3.6V
- VCC=12 fast production programming
- 1.65V~2.5V or 2.7V~3.6V I/O Option (VCCQ)
- Operating temperature:-40°C~85°C
• Fast access time : 90/120ns
• Low power consumption
- 9mA maximum active read current, f=5MHz (CMOS
input)
- 21mA program erase current maximum
(VPP=1.65~3.6V)
- 7uA typical standby current under power saving
mode
• Sector architecture
- Sector Erase (Sector structure : 4Kword x 2 (boot
sectors), 4Kword x 6 (parameter sectors), 32Kword x
7 (parameter sectors)
- Top Boot
• Auto Erase (chip & sector) and Auto Program
- Automatically program and verify data at specified
address
67,108,864-BIT(8,388,608 - WORD BY 8-BIT / 4,194,304 - WORD BY 16-BIT)
3.3V ONLY FLASH MEMORY
• Automatic Suspend Enhance
- Word/byte write suspend to read
- Sector erase suspend to word/byte write
- Sector erase suspend to read register report
• Automatic sector erase, full chip erase, word write and
sector lock/unlock configuration
• Status Reply
- Detection of program and erase operation comple-
tion.
- Command User Interface (CUI)
- Status Register (SR)
• Data Protection Performance
- Include boot sectors and parameter and main sectors
to be block/unblock
• 100,000 minimum erase/program cycles
• Common Flash Interface (CFI)
• 64-bit Protection Register
Latch-up protected to 100mA from -1V to VCC+1V
• Package type:
- 48-pin TSOP (12mm x 20mm)
A15
1
48
A16
A14
2
47
VCCQ
A13
3
46
GND
A12
4
45
Q15
A11
5
44
Q7
A10
6
43
Q14
A9
7
42
Q6
A8
8
41
Q13
A21
9
40
Q5
A20
10
39
Q12
WE
11
RP
12
M5M29GB640VP
38
Q4
37
VCC
NC
13
36
Q11
WP
14
35
Q3
A19
15
34
Q10
A18
16
33
Q2
A17
17
32
Q9
A7
18
31
Q1
A6
19
30
Q8
A5
20
29
Q0
A4
21
28
OE
A3
22
1
A2
23
27
GND
26
CE
A1
24
25
A0
1