LT1X67A Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – 1608 Size, 0.8mm Thickness, Leadless Chip LED Devices

Leadless Chip LED Device
LT1t67A series
LT1t67A series
1608 Size, 0.8mm Thickness,
Leadless Chip LED Devices
s Outline Dimensions
(Unit : mm)
s Radiation Diagram
(Ta=25˚C)
1.6^±0.15
0.8
-20˚
0˚
+20˚
-40˚
100
+40˚
1
2
1.2
1.0
Recommended PWB pattern for soldering
Device center
0.8 0.85 0.8
80
60
-60˚
+60˚
40
-80˚
20
+80˚
0
(0.3)
(0.3)
(0.3)
Chip side mark
1.Plating area
Resist
2.Pin connections
1 Cathode
2 Anode
1
2
3.Unspecified tolerance:±0.1
X
-20˚
0˚
+20˚
-40˚
100
+40˚
80
60
-60˚
+60˚
40
20
-80˚
+80˚
U type: There is Anode mark on the device because polarity faces in the
0
opposite direction.
Y
s Absolute Maximum Ratings
(Ta=25˚C)
Power dissipation Forward current Peak forward current ^{Derating factor} Reverse voltage Operating temperature Storage temperature Soldering temperature
Model No. Radiation color Radiation material P
IF
IFM*1
(mA/˚C)
VR
Topr
Tstg
Tsol*2
(mW) (mA)
(mA)
DC Pulse
(V)
(˚C)
(˚C)
(˚C)
LT1U67A Red(Super-luminosity) GaAlAs on GaAlAs 75
30
LT1P67A Red
GaP
23
10
LT1D67A Red
GaAsP on GaP
84
30
LT1S67A Sunset orange GaAsP on GaP
84
30
LT1H67A Yellow
GaAsP on GaP
84
30
LT1E67A Yellow-green GaP
84
30
LT1F67A Yellow-green(High-luminosity) GaP
84
30
LT1K67A Green
GaP
84
30
50
0.40 0.67
4
-30 to +85 -40 to +100 350
50
0.13 0.67
5
-30 to +85 -40 to +100 350
50
0.40 0.67
5
-30 to +85 -40 to +100 350
50
0.40 0.67
5
-30 to +85 -40 to +100 350
50
0.40 0.67
5
-30 to +85 -40 to +100 350
50
0.40 0.67
5
-30 to +85 -40 to +100 350
50
0.40 0.67
5
-30 to +85 -40 to +100 350
50
0.40 0.67
5
-30 to +85 -40 to +100 350
*1 Duty ratio=1/10, Pulse width=0.1ms
*2 For 3s or less at the temperature of hand soldering. Temperature of reflow soldering is shown on the below page.
s Electro-optical Characteristics
(Ta=25˚C)
Lens type Model No.
LT1U67A
LT1P67A
LT1D67A
Milky LT1S67A
diffusion LT1H67A
LT1E67A
LT1F67A
LT1K67A
Forward voltage
VF(V)
TYP MAX
1.85 2.5
1.9
2.3
2.0
2.8
2.0
2.8
2.0
2.8
2.1
2.8
2.1
2.8
2.1
2.8
Peak emission wavelength
λp(nm)
IF
TYP (mA)
660
20
695
5
635
20
610
20
585
20
565
20
570
20
555
20
Luminous intensity
IV(mcd) IF
TYP (mA)
29.7
20
1.3
5
8.8
20
6.9
20
8.3
20
11.0
20
19.0
20
3.8
20
Spectrum radiation bandwidth
∆λ(nm) IF
TYP (mA)
20
20
100
5
35
20
35
20
30
20
30
20
30
20
25
20
Reverse current
IR(µA) VR
MAX (V)
100
3
10
4
10
4
10
4
10
4
10
4
10
4
10
4
Terminal capacitance Page for
Ct(pF)
characteristics
TYP ^(MHZ) diagrams
25
1
→
55
1
→
20
1
→
15
1
→
35
1
→
35
1
→
35
1
----
40
1
→
95 (Notice) ¡In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
(Internet) ¡Data for sharp's optoelectronic/power device is provided for internet.(Address http://www.sharp.co.jp/ecg/)