LN-1A11 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – INFRARED EMITTING DIODE

INFRARED EMITTING DIODE
Model No. LN-1A11T
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
CHARACTERISTIC
SYMBOL
RATING
Forward current
IF
40
Pulse forward current
IFP
1
Reverse voltage
VR
5
Operating temperature
Topr
-20 to +70
Storage temperature
Power dissipation
Tstg
-25 to +80
PM
75
Lead soldering temperature ( 5mm from body ) 260℃ for 5 sec.
UNIT
mA
A
V
℃
℃
mW
ELECTRICAL OPTICAL CHARACTERISTICS (Ta = 25℃)
CHARACTERISTIC
SYMBOL CONDITION Min.
Forward voltage
VF IF=20mA
Reverse current
IR VR=5V
Peak emission wavelength
λp IF=20mA
Spectral band width
Δλ IF=20mA
Breakdown voltage
VBR IR=100uA
5
Switching time Ie from 10% to 90% ^{Tr/Tf IF=20mA}
Viewing half angle
2θ1/2 IF=20mA
Power output
Po IF=20mA
Unit : mm
Typ.
1.3
940
50
30
700/500
70
2.0
Max.
1.5
10
UNIT
V
uA
nm
nm
V
ns
deg.
mW/cm

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