KPD1203K Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Unbiased for low frequency or biased for high frequency measurement

Si Photodiode
KPD1203K
Features
• Transparent epoxy potting
• High sensitivity
• Broad directivity
• Unbiased for low frequency or biased for high frequency measurement
Applications
• Optical switches
• Optical encoders
• Pulse detectorS
• Sensors and industrial controls
Maximum ratings
Item
Symbol
Reverse Voltage
V_R
Reverse Current
I_R
Forward Current
I_F
Operating Temperature Top
Storage Temperature
Tstg
Value
15
500
60
-20 ~ +100
-30 ~ +100
Units
V
µA
mA
˚C
˚C
KPD1203K
K1
Transparent
epoxy resin
ø4.2
ø0.45
2.54
ø5.7 max
1
45˚
1
1
1 Anode
2 Cathode
2
TO-18
(Units: mm)
Characteristics (Ta=25 ˚C unless otherwise noted.)
Parameter
Symbol Min.
Typ.
Max.
Active Dia.
Operating Voltage
Sensitive Wavelength
Open Circuit Voltage
Short Circuit Current
Dark Current
Capacitance
Rise/Fall Time
Cutoff Frequency
D
0.92x0.92
0
V_R0
5
l
450 950(l_p) 1100
V_op
320
400
I_sh
4
9
I_d
0.1
1
C
50
60
t_r
8
10
tf
27
35
f_c
10
15
Units
Test Conditions
mm
For low frequency
V
For high frequency
nm l_P=Peak wavelength
mV
1000lux(@2856K)
µA
nA
V_R=5V
pF V = 0, f = 1MHz
ns V_R=5V, l=780nm, R_L=50Ω
MHz V_R=5V, l=780nm, R_L=50Ω
Kyosemi Corporation