IKB06N60T Datasheet, PDF (1/14 Pages) List of Unclassifed Manufacturers – Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

IKB06N60T
TrenchStop series
IKP06N60T
^
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
C
• Very low V_CE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• Designed for :
G
E
- Variable Speed Drive for washing machines, air
conditioners and induction cooking
- Uninterrupted Power Supply
• Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
P-TO-220-3-1
(TO-220AB)
- high ruggedness, temperature stable behavior
- very high switching speed
- low V_CE(sat)
• Low EMI
• Very soft, fast recovery anti-parallel EmCon HE diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
Type
IKP06N60T
V_CE
600V
I_{C;Tc=100°C} V_{CE(sat),Tj=25°C}
6A
1.5V
IKB06N60T 600V
6A
1.5V
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current, limited by T_jmax
T_C = 25°C
T_C = 100°C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area
V_CE ≤ 600V, T_j ≤ 175°C
Diode forward current, limited by T_jmax
T_C = 25°C
T_C = 100°C
Diode pulsed current, t_p limited by T_jmax
Gate-emitter voltage
Short circuit withstand time¹⁾
V_GE = 15V, V_CC ≤ 400V, T_j ≤ 150°C
Power dissipation
T_C = 25°C
Operating junction temperature
Storage temperature
T_j,max
175°C
175°C
Marking Code Package Ordering Code
K06T60 TO-220-3-1 Q67040S4679
K06T60 TO-263-3-2 Q67040S4680
Symbol
V_CE
I_C
I_Cpuls
-
I_F
I_Fpuls
V_GE
t_SC
P_tot
T_j
T_stg
Value
Unit
600
V
A
12
6
18
18
12
6
18
±20
V
5
µs
88
W
-40...+175
°C
-55...+175
1) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
Power Semiconductors
1
Rev. 2 Oct-04