IGW08T120 Datasheet, PDF (1/12 Pages) List of Unclassifed Manufacturers – Low Loss IGBT in Trench and Fieldstop technology

Preliminary
TrenchStoP Series
IGW08T120
Low Loss IGBT in Trench and Fieldstop technology
• Approx. 1.0V reduced V_CE(sat) compared to BUP305D
• Short circuit withstand time – 10µs
• Designed for :
- Frequency Converters
- Uninterrupted Power Supply
• Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in V_CE(sat)
• Low EMI
• Low Gate Charge
C
G
E
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
V_CE
I_C
V_{CE(sat),Tj=25°C}
IGW08T120
1200V
8A
1.7V
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T_C = 25°C
T_C = 100°C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area
V_CE ≤ 1200V, T_j ≤ 150°C
Diode forward current
T_C = 25°C
T_C = 100°C
Gate-emitter voltage
Short circuit withstand time¹⁾
V_GE = 15V, V_CC ≤ 1200V, T_j ≤ 150°C
Power dissipation
T_C = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
T_j,max
150°C
Package
TO-247AC
Ordering Code
Q67040-S4513
Symbol
V_CE
I_C
I_Cpuls
-
I_F
V_GE
t_SC
P_tot
T_j
T_stg
-
Value
Unit
1200
V
A
16
8
24
24
16
8
±20
V
10
µs
70
W
-40...+150
°C
-55...+150
260
1) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
Power Semiconductors
1
Preliminary / Rev. 1 Sep-03