HTZ120A51K Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – High Voltage Diode Rectifier Module

HTZ120A Series
I_F(AV) = 2.0 A
V_RRM = 51000 V
High Voltage
Diode Rectifier
Module
Type
Number
HTZ120A51K
HTZ120A44K
HTZ120A38K
HTZ120A32K
Repetitive
Peak
51000
44000
38000
32000
Minimum
Avalanche
Voltage
V_(BR)R
54400
48000
41600
35200
CIRCUIT DIAGRAM
-V_RRM-
+
_
LARONTROL
Electronic Devices
Centre Tap
CURRENT RATINGS - AIR COOLED
I_F(AV)
I_F
R_th(j-a)
Mean forward current
Continuous (direct) forward current
Thermal resistance junction to ambient
Half wave resistive load T_amb = 35ºC
T_amb = 35ºC
2.0 A
2.4 A
2.3 ºC/W
CURRENT RATINGS - OIL COOLED
I_F(AV)
I_T
R_th(j-o)
Mean forward current
Continuous (direct) forward current
Thermal resistance junction to oil
Half wave resistive load T_oil = 60ºC
T_oil = 60ºC
3.3 A
4.1 A
0.93 ºC/W
SURGE RATINGS
I²t
I²t for fusing
I_FSM
Surge (non-repetitive) forward current
10 ms half sine T_vj = 150ºC
T_vj = 150ºC
200 A²sec
200 A
TEMPERATURE AND FREQUENCY RATINGS
T_vj
Virtual junction temperature
T_stg
Storage temperature range
f
Frequency range
Forward (conducting)
Reverse (blocking)
180 ºC
180 ºC
-40 to 100 ºC
20 to 400 Hz
CHARACTERISTICS T_case = 25ºC unless otherwise stated
V_FM
Forward voltage
At 12 Amps peak
I_RM
Peak reverse current
At V_RRM; T_case = 150°C
max 36.8 V
max 0.5 mA
Dimensioned Outlines
Dimensions shown are maximum in mm
Weight typ.: 1,66 Kg
6.8 DIA
BOTH ENDS
300
150
150
48
348
TAPPED M6, 3 OFF
IXYS reserves the right to change limits, test conditions and dimensions.
368
Distributed by
USA
3540 Bassett Street
Santa Clara, CA 95054
Phone: [phone]
FAX: [phone]
EUROPE
IXYS Semiconductor GmbH
Lampertheim Germany
Phone: [phone]
Fax: [phone]
48
ZA
Issue 1 June 1998
www.IXYS.net