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GB01SLT12-220 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – Silicon Carbide Power Schottky Diode | |||
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Silicon Carbide Power
Schottky Diode
Features
ï· 1200 V Schottky rectifier
ï· 175 °C maximum operating temperature
ï· Temperature independent switching behavior
ï· Superior surge current capability
ï· Positive temperature coefficient of VF
ï· Extremely fast switching speeds
ï· Superior figure of merit QC/IF
Package
ï· RoHS Compliant
1
2
TO â 220AC
GB01SLT12-220
VRRM
IF
QC
= 1200 V
= 1A
= 13 nC
PIN 1
PIN 2
CASE
Advantages
ï· Improved circuit efficiency (Lower overall cost)
ï· Low switching losses
ï· Ease of paralleling devices without thermal runaway
ï· Smaller heat sink requirements
ï· Low reverse recovery current
ï· Low device capacitance
ï· Low reverse leakage current at operating temperature
Applications
ï· Power Factor Correction (PFC)
ï· Switched-Mode Power Supply (SMPS)
ï· Solar Inverters
ï· Wind Turbine Inverters
ï· Motor Drives
ï· Induction Heating
ï· Uninterruptible Power Supply (UPS)
ï· High Voltage Multipliers
Maximum Ratings at Tj = 175 °C, unless otherwise specified
Parameter
Symbol
Conditions
Repetitive peak reverse voltage
Continuous forward current
RMS forward current
Surge non-repetitive forward current, Half Sine
Wave
Non-repetitive peak forward current
I2t value
Power dissipation
Operating and storage temperature
VRRM
IF
IF(RMS)
IF,SM
IF,max
â«i2 dt
Ptot
Tj , Tstg
TC ⤠160 °C
TC ⤠160 °C
TC = 25 °C, tP = 10 ms
TC = 160 °C, tP = 10 ms
TC = 25 °C, tP = 10 µs
TC = 25 °C, tP = 10 ms
TC = 160 °C, tP = 10 ms
TC = 25 °C
Values
1200
1
2
10
8
65
0.5
0.3
42
-55 to 175
Electrical Characteristics at Tj = 175 °C, unless otherwise specified
Parameter
Symbol
Conditions
Diode forward voltage
Reverse current
Total capacitive charge
Switching time
Total capacitance
VF
IF = 1 A, Tj = 25 °C
IF = 1 A, Tj = 175 °C
IR
VR = 1200 V, Tj = 25 °C
VR = 1200 V, Tj = 175 °C
QC
ts
IF ⤠IF,MAX
dIF/dt = 200 A/μs
Tj = 175 °C
VR = 400 V
VR = 960 V
VR = 400 V
VR = 960 V
VR = 1 V, f = 1 MHz, Tj = 25 °C
C
VR = 400 V, f = 1 MHz, Tj = 25 °C
VR = 1000 V, f = 1 MHz, Tj = 25 °C
min.
Values
typ.
1.7
2.6
<1
2
7
13
< 17
69
10
8
max.
2.0
3.0
2
20
Thermal Characteristics
Thermal resistance, junction - case
RthJC
3.6
Mechanical Properties
Mounting torque
M
0.6
Dec 2012
http://www.genesicsemi.com/index.php/sic-products/schottky
Unit
V
A
A
A
A
A2s
W
°C
Unit
V
µA
nC
ns
pF
°C/W
Nm
Pg1 of 4
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