GA50TS120K Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Short Circuit Rated Ultra-FastTM Speed IGBT

PRELIMINARY GA50TS120K
]HALF-BRODGE” IGBT INT-A -PAK
Short Circuit Rated
Ultra-Fast^TM Speed IGBT
Features
• Generation 5 IGBT NPT technology
• UltraFast optimized high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode.
• Very low conduction and switching losses
• HEXFRED ^TM antiparallel diodes with ultra-soft
recovery
• Industry standard package
• UL recongnition pending
• Short circuit rated 10 µs
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding,Mortor Control
• Lower EMI, requries less snubbing
VCES=1200V
VCE(on) typ.=2.5V
@VGE=15V,IC=50A
Absolute Maximum Ratings
Parameter
VCES
IC @ Tc=25^oC
Collector- to- Emitter Voltage
Continuous Collector Current
IC @ Tc=85^oC
Continuous Collector Current
ICM
Pulsed collector Current
ILM
Peak switching Current
IFM
Peak Diode Forward Current
VGE
Gate- to- Emitter Voltage
VISOL
RMS Isolation Voltage, Any Terminal To Case, t =1 min
PD @ TC =25^oC
PD^ @ TC^ =85^oC
TJ ^

Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
TSTG
Storage Temperature Range
Max.
1200
75
50
100
100
100
±20
2500
417
217
-40 to +150
-40 to +125
Units
V
A
V
W
C ^{o}
Termal / Mechanical Characteristics
Parameter
RθJC
Termal Resistance, Junction-to- Case- IBGT
RθJC
Termal Resistance, Junction-to- Case- Diode
RθCS
Termal Resistance, Csar-to- Sink- Module
Mouting Torque, Case-to-Heatsink
Mouting Torque, Case-to-Terminal 1,2 & 3
Weight of Module
1
Typ.
-
-
0.1
-
-
200
Max.
0.30
0.70
-
4.0
3.0
-
Units
o_C/W
N.m
g