GA150TD120K Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Short Circuit Rated Ultra-Fast tm Speed IGBT

PRELIMINARY GA150TD120K
]HALF-BRODGE” IGBT DOUBLE INT-A -PAK
Short Circuit Rated
Ultra-Fast^TM Speed IGBT
Features
• Generation 5 IGBT NPT technology
• UltraFast optimized high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode.
• Very low conduction and switching losses
• HEXFRED ^TM antiparallel diodes with ultra-soft
recovery
• Industry standard package
• UL recongnition pending
• Short circuit rated 10 µs
Benefits
VCES=1200V
VCE(on) typ.=2.5V
@VGE=15V,IC=150A
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding,Mortor Control
• Lower EMI, requries less snubbing
Absolute Maximum Ratings
Parameter
VCES
IC @ Tc=25^oC
IC @ Tc=85^oC
ICM
ILM
IFM
VGE
VISOL
PD @ TC =25^oC
PD^ @ TC^=85^oC
TJ ^

TSTG
Collector- to- Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed collector Current
Peak switching Current
Peak Diode Forward Current
Gate- to- Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t =1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
1200
210
150
300
300
300
±20
2500
1250
650
-40 to +150
-40 to +125
Units
V
A
V
W
C ^{o}
Termal / Mechanical Characteristics
Parameter
RθJC
Termal Resistance, Junction-to- Case- IBGT
RθJC
Termal Resistance, Junction-to- Case- Diode
RθCS
Termal Resistance, Csar-to- Sink- Module
Mouting Torque, Case-to-Heatsink
Mouting Torque, Case-to-Terminal 1,2 & 3
Weight of Module
1
Typ.
-
-
0.1
-
-
400
Max.
0.10
0.15
-
4.0
3.0
-
Units
o_C/W
N.m
g