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| FZT2907 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – SOT223 PNP SILICON PLANAR SWITCHING TRANSISTOR | |||
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SOT223 PNP SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 4 Â JUNE 1996
7
FEATURES
* 60 Volt VCEO
* Fast switching
FZT2907
FZT2907A
C
PARTMARKING DETAIL Â
FZT2907 Â FZT2907
FZT2907A Â FZT2907A
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
VCBO
VCEO
VEBO
IC
Ptot
Tj:Tstg
FMMT2907 FMMT2907A
-60
-40
-60
-5
-600
1.5
-55 to +150
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL FZT2907 FZT2907A UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
V(BR)CBO -40
Breakdown Voltage
-60
V
IC=-10µA, IE=0
Collector-Emitter
V(BR)CEO -60
-60
V
IC=-10mA, IB=0*
Breakdown Voltage
Emitter-Base
V(BR)EBO -5
Breakdown Voltage
-5
V
IE=-10µA, IC=0
Collector-Emitter
ICEX
Cut-Off Current
-50
-50 nA VCE=-30V, VBE=-0.5V
Collector Cut-Off
Current
ICBO
Base Cut-Off Current IB
Collector-Emitter
VCE(sat)
Saturation Voltage
Base-Emitter
VBE(sat)
Saturation Voltage
Static Forward
hFE
Current Transfer
Ratio
Transition
Frequency
fT
-20
-20
-10
-10
nA
µA
VVCCBB==--5500VV,, IIEE==00, Tamb=150°C
-50
-50 nA VCE=-30V, VBE=-0.5V
-0.4
-0.4 V
IC=-150mA, IB=-15mA*
-1.6
-1.6 V
IC=-500mA, IB=-50mA*
-1.3
-1.3 V
IC=-150mA, IB=-15mA*
-2.6
-2.6 V
IC=-500mA, IB=-50mA*
35
75
50
100
75
100
100 300 100 300
30
50
IC=-0.1mA, VCE=-10V
IC=-1mA, VCE=-10V
IC=-10mA, VCE=-10V
IC=-150mA, VCE=-10V*
IC=-500mA, VCE=-10V*
200
200
MHz fIC==1-0500MmHAz, VCE=-20V
*Measured under pulsed conditions. Pulse width=300ms. Duty cycle ⤠2%
3 - 298
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