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| FXT449 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 Â SEPT 93
FEATURES
* 30 Volt VCEO
* 1 Amp continuous current
* Ptot= 1 Watt
FXT449
B
C
E
REFER TO ZTX449 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
E-Line
TO92 Compatible
VALUE
50
30
5
2
1
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 50
V
IC=100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 30
V
IC=10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
V
IE=100µA, IC=0
Collector Cut-Off Current ICBO
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
IEBO
VCE(sat)
VBE(sat)
0.1
µA
10
µA
0.1
µA
0.5
V
1
V
1.25 V
VCB=40V
VCB=40V, Tamb=100°C
VEB=4V, IC=0
IC=1A, IB=100mA*
IC=2A, IB=200mA*
IC=1A, IB=100mA*
Base-Emitter
Turn-on Voltage
VBE(on)
1
V
IC=1A,VCE=2V*
Static Forward Current hFE
70
Transfer Ratio
100
80
40
Transition
Frequency
fT
150
IC=50mA, VCE=2V*
300
IC=500mA, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
MHz IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Cobo
15
pF
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
3-30
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