FP2189 Datasheet, PDF (1/6 Pages) List of Unclassifed Manufacturers – high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount

FP2189
1 Watt HFET
The Communications Edge ^TM
Preliminary Product Information
Product Features
• 50 – 4000 MHz
• Up to +31 dBm P1dB
• Up to +45 dBm Output IP3
• High Drain Efficiency
• 19 dB Gain @ 900 MHz
• MTBF >100 Years
• SOT-89 SMT Package
Product Description
The FP2189 is a high performance 1-Watt HFET
(Heterostructure FET) in a low-cost SOT-89 surface-
mount package. This device works optimally at a drain
bias of +8 V and 250 mA to achieve +45 dBm output
IP3 performance and an output power of +31 dBm at
1-dB compression.
The device conforms to WJ Communications’ long
history of producing high reliability and quality
components. The FP2189 has an associated MTBF of
greater than 100 years at a mounting temperature of
85°C. All devices are 100% RF & DC tested.
The product is targeted for use as driver amplifiers for
wireless infrastructure where high performance and high
efficiency are required.
Functional Diagram
4
1
2
Function
Input
Ground
Output/Bias
Ground
3
Pin No.
1
2
3
4
Specifications
DC Electrical Parameter Units Min Typ Max
Saturated Drain Current¹, I_dss
mA
500
Transconductance, G_m
mS
350
Pinch Off Voltage², V_p
V
-2.0
Parameters³
Units Min Typ Max
Frequency Range
Small Signal Gain, Gss
Output P1dB
Output IP3⁴
Thermal Resistance
MHz 50
dB
dBm
dBm
°C/W
4000
15
+31
+45
30
1. Idss is measured with Vgs = 0 V, Vds = 3 V.
2. Pinch-off voltage is measured when Ids = 0.4 mA.
3. Test conditions unless otherwise noted: T = 25ºC, VDS = 8 V, IDQ = 250 mA, frequency = 900 MHz
in an application circuit with ZL = ZLOPT, ZS = ZSOPT .
4. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.

Absolute Maximum Ratings
Parameters
Operating Case Temperature
Storage Temperature
Maximum DC Power
RF Input Power (continuous)
Rating
-40 to +85 °C
-40 to +125 °C
4.0 W
+20 dBm
Operation of this device above any of there parameters may cause permanent damage
Typical Parameters⁵
Parameter Units
Typical
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
V_dd
I_dq6
I_dd at P1dB
MHz
dB
dB
dB
dBm
dBm
dB
V
mA
mA
915
19.1
-17
-10
+30.3
+44.3
4.2
+8
250
260
1960
15.2
-16
-8
+30.8
+44.2
3.5
+8
250
330
2140
13.8
-23
-9
+31.4
+45.5
4.5
+8
250
320
5. Typical parameters represent performance in an application circuit.
6. Idq is the quiescent drain current at small signal output levels. The
current may increase as the output power is increased near its
compression point.
Ordering Information
Part No.
FP2189
FP2189-PCB900S
FP2189-PCB1900S
FP2189-PCB2140S
Description
1-Watt HFET
(Available in Tape & Reel)
900 MHz Application Circuit
1900 MHz Application Circuit
2140 MHz Application Circuit
This document contains information on a new product.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: [phone] • e-mail: [e-mail] • Web site: www.wj.com
May 2002