FP150TA10U Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – HALF BRODGE HEXFET POWER MOSFET A-A - PAK

XI’AN IR-PERI
Company
PRELIMINARY.2#6)7
]HALF-BRODGE ^ HEXFET Power MOSFET A - A - PAK
Features
• Advanced Process Technology
• Ultra Low On-Resistance
• Dynamic dv/dt Rating
• 175 ^oC Operating Temperature
• Fast Switching
• Fully Avalanche Rated
!
VDSS=100V
"
#

RDS(on) =0.009Ω
$
%
ID=170A
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding,Mortor Control
• Lower EMI, requries less snubbing
Absolute Maximum Ratings
Parameter
ID @ Tc=25^oC
ID @ Tc=100^oC
IDM
PD @ Tc=25^oC
Continuous Drain Current,VGS@10V
Continuous Drain Current,VGS@10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
Gate- to- Source Voltage
EAS
IAR
EAR
dv/dt
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
Operating Junction Temperature Range
TSTG
Storage Temperature Range
Termal / Mechanical Characteristics
Parameter
RθJC
Termal Resistance, Junction-to- Case- IBGT
RθJC
Termal Resistance, Junction-to- Case- Diode
RθCS
Termal Resistance, Csar-to- Sink- Module
Mouting Torque, Case-to-Heatsink
Mouting Torque, Case-to-Terminal 1,2 & 3
Weight of Module
1
Max.
170
120
670
580
3.8
±30
1350
100
58
2.3
-55 to +175
-55 to +175
Units
A
W
W/^oC
V
mJ
A
mJ
V/ns
C ^{o}
Typ.
-
-
0.1
-
-
100
Max.
0.26
0.36
-
4.0
3.0
-
Units
o_C/W
N.m
g