FP1189 Datasheet, PDF (1/10 Pages) List of Unclassifed Manufacturers – High Performance ½-Watt HFET(Heterostructure FET)

FP1189
½-Watt HFET
The Communications Edge ^TM
Product Information
Product Features
• 50 – 4000 MHz
• +27 dBm P1dB
• +40 dBm Output IP3
• High Drain Efficiency
• 20.5 dB Gain @ 900 MHz
• MTTF >100 Years
• SOT-89 SMT Package
Applications
• Mobile Infrastructure
• CATV / DBS
• W-LAN / ISM
• RFID
• Defense / Homeland Security
• Fixed Wireless
Product Description
Functional Diagram
The FP1189 is a high performance ½-Watt HFET
(Heterostructure FET) in a low-cost SOT-89 surface-
mount package. This device works optimally at a
drain bias of +8 V and 125 mA to achieve +40 dBm
output IP3 performance and an output power of +27
dBm at 1-dB compression, while providing 20.5 dB
gain at 900 MHz.
The device conforms to WJ Communications’ long
history of producing high reliability and quality
components. The FP1189 has an associated MTTF
of greater than 100 years at a mounting temperature
of 85°C. All devices are 100% RF & DC tested.
GND
4
1
RF IN
2
GND
3
RF OUT
Function
Input / Gate
Output / Drain
Ground
Pin No.
1
3
2, 4
The product is targeted for use as driver amplifiers
for wireless infrastructure where high performance
and high efficiency are required.
Specifications
DC Parameter
Saturated Drain Current, I_dss (1)
Transconductance, G_m
Pinch Off Voltage, V_p (2)
Thermal Resistance
Junction Temperature (3)
Units Min
mA 220
mS
V
°C / W
°C
Typ
290
155
-2.1
Max
360
68
160
RF Parameter (4)
Frequency Range
Small Signal Gain
SS Gain (50 Ω, unmatched)
Maximum Stable Gain
Output P1dB
Output IP3 (5)
Noise Figure
Units
MHz
dB
dB
dB
dBm
dBm
dB
Min
50
17
Typ
900
20.5
24
+27.4
+40
2.7
Max
4000
21
1. Idss is measured with Vgs = 0 V, Vds = 3 V.
2. Pinch-off voltage is measured when Ids = 1.2 mA.
3. The junction temperature ensures a minimum MTTF rating of 1 million hours of usage.
4. Test conditions unless otherwise noted: T = 25ºC, VDS = 8 V, IDQ = 125 mA, frequency = 900 MHz in
a tuned application circuit with ZL = ZLOPT, ZS = ZSOPT (optimized for output power).
5. 3OIP measured with two tones at an output power of +12 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Typical Performance
Parameter (6)
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
Channel Power (7)
@ -45 dBc ACPR
Drain Voltage
Drain Current
Units
MHz
dB
dB
dB
dBm
dBm
dB
dBm
V
mA
915
20.6
-13
-6.0
+27.4
+39.9
2.7
+21
Typical
1960
15.7
-26
-9.6
+27.2
+40.4
3.7
+20.8
+8
125
2140
14.7
-24
-9.0
+27.2
+39.7
4.3
+18.4
6. Typical parameters represent performance in an application circuit.
7. An IS-95 signal is used for 915 / 1960 MHz. A 3GPP W-CDMA signal is used for 2140 MHz.
Absolute Maximum Rating
Ordering Information
Parameter
Operating Case Temperature
Storage Temperature
DC Power
RF Input Power (continuous)
Drain to Gate Voltage, V_dg
Junction Temperature
Rating
-40 to +85 °C
-55 to +125 °C
2.0 W
6 dB above Input P1dB
+14 V
+220° C
Part No.
FP1189
FP1189-PCB900S
FP1189-PCB1900S
FP1189-PCB2140S
Description
½ -Watt HFET
870 – 960 MHz Application Circuit
1930 – 1990 MHz Application Circuit
2110 – 2170 MHz Application Circuit
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: [phone] • e-mail: [e-mail] • Web site: www.wj.com
June 2003