English
Language : 

FMMT5087 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTOR
SOT23 PNP SILICON PLANAR
SMALL SIGNAL TRANSISTOR
PARTMARKING DETAIL -
FMMT5087 - 2m
FMMT5087R - 3m
COMPLEMENTARY TYPE - FMMT5088
FMMT5087
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
VCBO
VCEO
VEBO
IC
Ptot
Tj:Tstg
VALUE
-50
-50
-3
-100
330
-55 to +150
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX. UNIT
CONDITIONS.
Collector-Base
ICBO
Cut-Off Current
Emitter-Base Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
-10 nA
-50 µA
-50 nA
-300 mV
VCB=-10V, IE=0
VCB=-35V, IE=0
VEB=-3V, IC=0
IC=-10mA, IB=-1mA
Base-Emitter
ON Voltage
VBE(on)
-850 mV
IC=-1mA, VCE=-5V
Static Forward
hFE
Current Transfer
Ratio
Transition
fT
Frequency
250
800
250
250
IC=-100µA, VCE=-5V
IC=-1mA, VCE=-5V
IC=-10mA, VCE=-5V*
40
MHz
IC=-500µA, VCE=-5V f=20MHz
Small Signal Current hfe
Transfer Ratio
250
900
IC=-1mA, VCE=-5V f=1KHz
Noise Figure
N
2 dB
IC=200µA, VCE=-5V, Rg=2KΩ
f=30Hz to 15KHz at 2dB
points
Output Capacitance Cobo
4 pF
VCB=-5V, f=140MHz, IE=0
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device