FLU35ZM Datasheet, PDF (1/8 Pages) List of Unclassifed Manufacturers – L-Band Medium & High Power GaAs FET

FLU35ZM
FEATURES
・High Output Power: P1dB=35.5dBm(typ.)
・High Gain: G1dB=11.5dB(typ.)
・Low Cost Plastic(SMT) Package
・Tape and Reel Available
L-Band Medium & High Power GaAs FET
DESCRIPTION
The FLU35ZM is a GaAs FET designed for base station and CPE
application up to a 4.0GHz frequency range. This is a new product
series using a plastic surface mount package that has been optimized
for high volume cost driven applications.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25^oC)
Item
Drain-Source Voltage
Symbol
VDS
Rating
15
Gate-Source Voltage
VGS
-5
Total Power Dissipation
PT
20.8
Storage Temperature
Tstg
-55 to +150
Channel Temperature
Tch
175
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25^oC)
Item
Symbol
Condition
DC Input Voltage
VDS
≤10
Channel Temperature
Tch
≤ 145
Forward Gate Current
Igsf
≤19.4
Reverse Gate Current
Igsr
≥-2.0
Gate Resistance
Rg
100
Unit
V
V
W
o_C
o_C
Unit
V
o_C
mA
mA
Ω
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25^oC)
Item
Drain Current
Transconductance
Symbol
IDSS
gm
Test Conditions
VDS=5V, VGS=0V
VDS=5V, IDS=800mA
Min.
-
-
Pinch-off Voltage
Vp
VDS=5V, IDS=60mA
-1.0
Gate-Source Breakdown
Voltage
VGSO
IGS=-60uA
-5
Limit
Typ.
1200
600
-2.0
-
Max. ^Unit
1800 mA
-
mS
-3.5
V
-
V
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS=10V
f=2.0GHz
IDS=0.6IDSS(Typ.)
34.5
10.5
35.5
11.5
-
dBm
-
dB
Thermal Resistance
Rth
Channel to Case
-
5
6
o_{C /W}
CASE STYLE: ZM
G.C.P.:Gain Compression Point
Note1: Product supplied to this specification are 100% DC performance tested.
Note2: The RF parameters are measured on a lot basis by sample testing 10 pcs/lot.
Acceptance Criteria:(accept/reject)=(0/1). Any lot failure shall be 100% retested.
ESD
Class Ⅲ
2000 V～
Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5kΩ)
Edition 1.2
Jan 2004
1