FLM8596-15F Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – X-Band Internally Matched FET

FLM8596-15F
FEATURES
・High Output Power: P1dB=42.0dBm(Typ.)
・High Gain: G1dB=7.5dB(Typ.)
・High PAE: ηadd=32%(Typ.)
・Broad Band: 8.5~9.6GHz
・Impedance Matched Zin/Zout = 50Ω
・Hermetically Sealed Package
X-Band Internally Matched FET
DESCRIPTION
The FLM8596-15F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25^OC)
Item
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Rating
Unit
15
V
-5
V
Total Power Dissipation
PT
57.7
W
Storage Temperature
Tstg
-65 to +175
o_C
Channel Temperature
Tch
175
o_C
Recommended Operating Condition(Case Temperature Tc=25^OC)
Item
Symbol
Condition
Limit
DC Input Voltage
VDS
≤10
Gate Current
IGS
RG=50Ω
≤16.7
Gate Current
IGR
RG=50Ω
≥-3.62
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25^OC)
Item
Symbol
Test Conditions
Limit
Min. Typ.
Drain Current
IDSS
VDS=5V, VGS=0V
-
7.2
Transconductance
gm
VDS=5V, IDS=2.4A
-
4500
Pinch-off Voltage
Vp
VDS=5V, IDS=240mA
-0.5 -1.5
Gate-Source Breakdown Voltage
VGSO
IGS=-300µA
-5.0
-
Output Power at 1dB G.C.P.
P1dB
41.0 42.0
Max.
10.8
-
-3.0
-
-
Unit
A
mS
V
V
dBm
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
G1dB
Idsr
ηadd
∆G
VDS=10V
f=8.5 - 9.6 GHz
IDS=0.5Idss
Zs=ZL=50Ω
6.5
7.5
-
dB
-
4.0
5.0
A
-
32
-
%
-
-
1.2
dB
Thermal Resistance
Channel Temperature Rise
CASE STYLE: IB
Rth
∆Tch
Channel to Case
10V X Idsr X Rth
-
2.3
2.6
o_C/W
-
-
100
o_C
G.C.P.:Gain Compression Point
ESD
Class Ⅲ
2000V　~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Edition 1.2
September 2004
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