FLM7785-18F Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – C-Band Internally Matched FET

FLM7785-18F
C-Band Internally Matched FET
FEATURES
• High Output Power: P1dB = 42.5dBm (Typ.)
• High Gain: G1dB = 7.0dB (Typ.)
• High PAE: η_add = 29% (Typ.)
• Low IM3 = -45dBc@Po = 31.5dBm
• Broad Band: 7.7 ~ 8.5GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed
DESCRIPTION
The FLM7785-18F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
Total Power Dissipation
PT
Tc = 25°C
83.3
W
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 18.0 and -8.4 mA respectively with
gate resistance of 25Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Limit
Min. Typ. Max.
Unit
Saturated Drain Current
Transconductance
Pinch-off Voltage
IDSS VDS = 5V, VGS = 0V
- 8.1 12.75
A
gm VDS = 5V, IDS = 5100mA - 4350 -
mS
Vp VDS = 5V, IDS = 450mA -1.0 -2.0 -3.5
V
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
VGSO
P1dB
G1dB
Idsr
η_add
IGS = -450µA
VDS = 10V,
IDS = 0.55 IDSS _(Typ.),
f = 7.7 ~ 8.5 GHz,
ZS=ZL= 50 ohm
-5
-
-
41.5 42.5 -
6.0 7.0 -
- 4700 5800
-
29 -
V
dBm
dB
mA
%
Gain Flatness
∆G
-
- ±0.6
dB
3rd Order Intermodulation
Distortion
f = 8.5 GHz, ∆f = 10 MHz
IM3 ^{2-Tone Test}
-42 -45 -
dBc
Pout = 31.5dBm S.C.L.
Thermal Resistance
Rth _{Channel to Case}
- 1.6 1.8
°C/W
Channel Temperature Rise
CASE STYLE: IK
∆Tch
10V x Idsr x Rth
-
- 80
°C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.2
August 2004
1