FLM5964-35F Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – C-Band Internally Matched FET

FEATURES
・High Output Power: P1dB=45.5dBm(Typ.)
・High Gain: G1dB=9.0dB(Typ.)
・High PAE: ηadd=36%(Typ.)
・Broad Band: 5.9~6.4GHz
・Impedance Matched Zin/Zout = 50Ω
・Hermetically Sealed Package
FLM5964-35F
C-Band Internally Matched FET
DESCRIPTION
The FLM5964-35F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25^oC)
Ite m
Symbol
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
Total Pow er Dissipation
PT
115
W
Storage Tem perature
Ts t g
-65 to +175
o_C
Channel Tem perature
Tch
175
o_C
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25^oC)
Ite m
Sym bol
Condition
Lim it
Unit
DC Input Voltage
Forw ard Gate Current
Reverse Gate Current
VDS
IGF
RG=10Ω
IGR
RG=10Ω
≤¹⁰
V
≤¹⁰⁸
mA
≥^-23.2
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25^oC)
Ite m
Sym bol
Condition
Drain Current
Tr ans conductance
Pinch-off Voltage
Gate-Source Breakdow n Voltage
IDSS
gm
Vp
VGSO
VDS=5V, VGS=0V
VDS=5V, IDS=8.0A
VDS=5V, IDS=480mA
IGS=-480uA
Output Pow er at 1dB G.C.P.
P1d B
VDS=10V
Pow er Gain at 1dB G.C.P.
G1dB f=5.9 - 6.4 GHz
Drain Current
Id s r
IDS(DC)=8.0A(typ.)
Pow er-added Efficiency
ηad d
Zs=ZL=50 ohm
Gain Flatness
3rd Order Interm odulation
Dis tor tion
∆G
f=6.4 GHz
IM3
∆ f=10MHz, 2-tone Test
Pout=35.0dBm(S.C.L.)
Therm al Resistance
Channel Tem perature Rise
Rt h
∆ Tch
Channel to Case
10V x IDS(DC) X Rth
CASE STYLE : IK
ESD
Class III 2000V　~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
M in.
-
-
-0.5
-5.0
45.0
8.0
-
-
-
-38
-
-
Lim it
Unit
Typ. Max.
16
-
A
16
-
S
-1.5 -3.0
V
-
-
V
45.5
-
dBm
9.0
-
dB
8.5
9.5
A
36
-
%
-
1.2
dB
-40
-
dBc
1.1
1.3
o_C/W
-
100
o_C
G.C.P.:Gain Compression Point
Edition 1.3
September 2004
1