FLM5359-45F Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – C-BAND INTERNALLY MATCHED FET

FEATURES
・High Output Power: P1dB=46.5dBm(Typ.)
・High Gain: G1dB=8.5dB(Typ.)
・High PAE: ηadd=36%(Typ.)
・Broad Band: 5.3~5.9GHz
・Impedance Matched Zin/Zout = 50Ω
・Hermetically Sealed Package
FLM5359-45F
C-Band Internally Matched FET
DESCRIPTION
The FLM5359-45F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25^oC)
Ite m
Symbol
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
Total Pow er Dissipation
PT
115.4
W
Storage Tem perature
Ts tg
-65 to +175
o_C
Channel Tem perature
Tch
175
o_C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25^oC)
Ite m
Sym bol
Condition
Lim it
Unit
DC Input Voltage
Forw ard Gate Current
Reverse Gate Current
VDS
IGF
RG=13 ohm
IGR
RG=13 ohm
≤¹²
V
≤^107.2
mA
≥^-23.2
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25^oC)
Ite m
Sym bol
Condition
Drain Current
Tr ans conductance
Pinch-off Voltage
Gate-Source Breakdow n Voltage
Output Pow er at 1dB G.C.P.
Pow er Gain at 1dB G.C.P.
Drain Current
Pow er-added Efficiency
Gain Flatness
Therm al Resistance
Channel Tem perature Rise
IDSS
gm
Vp
VGSO
P1d B
G1d B
Id s r
Nad d
∆G
Rt h
∆ Tch
VDS=5V, VGS=0V
VDS=5V, IDS=8.0A
VDS=5V, IDS=960mA
IGS=-960uA
VDS=12V
IDS(DC)=8.0A (typ.)
f= 5.3 ~ 5.9 GHz
Zs=ZL=50 ohm
Channel to Case
12V x IDS(DC) X Rth
CASE STYLE : IK
ESD
Class III 2000V　~
Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5kΩ)
M in.
-
-
-1.0
-5.0
46.0
7.5
-
-
-
-
-
Lim it
Unit
Typ. Max.
16.0
-
A
8000
-
mS
-2.0 -3.5
V
-
-
V
46.5
-
dBm
8.5
-
dB
8.5 10.0
A
36
-
-
1.4
0.8
1.0
-
100
%
dB
o_C/W
o_C
G.C.P.: Gain Compression Point
Edition 1.2
September 2004
1