FLM3135-4F Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – C-Band Internally Matched FET

FLM3135-4F
FEATURES
• High Output Power: P1dB = 36.5dBm (Typ.)
• High Gain: G1dB = 12.0dB (Typ.)
• High PAE: η_add = 38% (Typ.)
• Low IM3 = -45dBc@Po = 25.5dBm
• Broad Band: 3.1 ~ 3.5GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed Package
C-Band Internally Matched FET
DESCRIPTION
The FLM3135-4F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
15
V
-5
V
Total Power Dissipation
PT
Tc = 25°C
25
W
Storage Temperature
Tstg
-65 to +175
Channel Temperature
Tch
175
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 16.0 and -2.2 mA respectively with
gate resistance of 100Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Symbol
IDSS
gm
Test Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 1100mA
Min.
-
-
Limit
Typ. Max.
1950 2900
1000 ^-
Pinch-off Voltage
Vp VDS = 5V, IDS = 90mA -1.0 -2.0 -3.5
Gate Source Breakdown Voltage VGSO _{IGS = -90µA}
-5.0 -
-
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
P1dB
G1dB
Idsr
η_add
VDS =10V,
IDS = 0.55 IDSS _(Typ.),
f = 3.1 ~ 3.5 GHz,
ZS=ZL= 50 ohm
35.5 36.5 -
11.0 12.0 -
- 1100 1300
-
38
-
°C
°C
Unit
mA
mS
V
V
dBm
dB
mA
%
Gain Flatness
∆G
-
- ±0.6
dB
3rd Order Intermodulation
Distortion
f = 3.5 GHz, ∆f = 10 MHz
IM3 ^{2-Tone Test}
-42 -45 -
dBc
Pout = 25.5dBm S.C.L.
Thermal Resistance
Rth _{Channel to Case}
- 5.0 6.0
°C/W
Channel Temperature Rise
CASE STYLE: IB
∆Tch
10V x Idsr x Rth
-
- 80
°C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.1
August 2004
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