FLM0910-12F Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – X-Band Internally Matched FET

FLM0910-12F
X-Band Internally Matched FET
FEATURES
・High Output Power: P1dB=40.5dBm(Typ.)
・High Gain: G1dB=7.0dB(Typ.)
・High PAE: ηadd=25%(Typ.)
・Broad Band: 9.5~10.5GHz
・Impedance Matched Zin/Zout = 50Ω
・Hermetically Sealed Package
DESCRIPTION
The FLM0910-12F is a power GaAs FET that is internally matched
for standard communication and radar bands to provide optimum
power and gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25^°C)
Item
Symbol
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
Total Power Dissipation
PTot
57.6
W
Storage Temperature
Tstg
-65 to +175
o_C
Channel Temperature
Tch
175
o_C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25^°C)
Item
Symbol
Condition
Limit
DC Input Voltage
VDS
≤10
Gate Current
IGS
RG=50Ω
≤32.0
Gate Current
IGR
RG=50Ω
≥-5.6
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25^°C)
Item
Drain Current
Transconductance
Pinch-off Voltage
Symbol
IDSS
gm
Vp
Test Conditions
VDS=5V, VGS=0V
VDS=5V, IDS=3.6A
VDS=5V, IDS=300mA
Min.
-
-
-0.5
Limit
Typ.
6.0
5000
-1.5
Gate-Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
VGSO
P1dB
G1dB
Idsr
ηadd
IGS=-340uA
VDS=10V
f=9.5 - 10.5 GHz
IDS=0.5Idss (typ.)
Zs=ZL=50Ω
-5.0
-
39.5 40.5
6.0
7.0
-
3.5
-
25
Gain Flatness
∆G
-
-
Max.
9.0
-
-3.0
-
-
-
4.5
-
1.2
Unit
A
mS
V
V
dBm
dB
A
%
dB
Thermal Resistance
Channel Temperature Rise
CASE STYLE: IB
Rth
∆Tch
Channel to Case
-
2.3
2.6
o_C/W
10V X Idsr X Rth
-
-
80
o_C
G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level
Note:RF-Test is measured with Vgs-Constant Circuit.
ESD
Class Ⅲ
2000V　~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Edition 1.2
September 2004
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