FHF1 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – High Dynamic Range FET

FHF1
High Dynamic Range FET
The Communications Edge^™
Advanced Product Information
Product Features
• ^{3000-6000 MHz Bandwidth}
• +39 dBm Output IP3
• 2.4 dB Noise Figure
• +21 dBm P1dB
• Single or Dual Supply Operation
• MTBF >100 Years
• SOT-89 SMT Package
Actual Size
Product Description
Functional Diagram
The FHF1 is a high dynamic range FET pack-
aged in a low cost surface mount package. The
combination of low noise figure and high out-
put IP3 at the same bias point makes it ideal for
receiver and transmitter applications. The
FHF1 achieves +39 dBm OIP3 at a mounting
temperature of 85˚C with an associated MTBF
of >100 years⁶. The package is a SOT-89. All
devices are 100% RF and DC tested.
The product is targeted for applications where
high linearity is required.
4
1
2
3
Function
Gate
Source
Drain
Source
Pin No.
1
2
3
4
Specifications
DC Electrical Parameter
Saturated Drain Current, Idss
Transconductance, Gm
Pinch Off Voltage, Vp
Units
mA
mS
V
Minimum
100
-3.0
Typical
140
120
-1.5
Maximum
170
Condition
Vgs = 0 V
Ids = 0.6 mA
RF Parameter
Units Minimum Typical Maximum
Condition
Small Signal Gain, Gss
dB
10
12
Maximum Stable Gain, Gmsg
dB
17
Third Order Output Intercept, OIP3
dBm
+37
+39
1 dB Compression Point, P1dB
dBm
+21
Noise Figure, NF
dB
2.4
Notes:
1. DC and RF parameters measured under the following conditions unless otherwise noted.
25°C with Vds = 5.0 V, Vgs = 0 V, test frequency = 3000 MHz, 50 Ω system.
2. OIP3 measured with two tones at an output power of 5 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the OIP3 using a 2:1 slope rule.
3. Degradation of OIP3 occurs at low temperatures. Minimum typical OIP3 at -40°C is +36 dBm.
4. Idss is measured with Vgs = 0 V.
5. Pinch off voltage is measured when Ids = 0.6 mA.
6. MTBF calculated with channel temperature at 155˚C.
Absolute Maximum Ratings
Parameter
Rating
Drain to Source Voltage
Gate to Source Voltage
Gate Current
Storage Temperature
RF Input Power (continuous)
8.0 V
-6.0 V
4.5 mA
-55 to +125°C
+10 dBm
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No.
FHF1
Description
High Dynamic Range FET
(Available in tape and reel)
WJ Communications, Inc. • Phone: 1-800-WJ1-4401 • FAX: [phone] • e-mail: [e-mail] • Web site: www.wj.com
February 2002