FD1500W Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Large Area InGaAs PIN Photodiodes diameter of active area=1.5 mm

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Fermionics ^{Opto-Technology}
PART NUMBER
FD1500W
Large Area InGaAs PIN Photodiodes
diameter of active area=1.5 mm
DESCRIPTION
Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral
response in the region 800 nm to 1700 nm. The photosensitive area is 1.5 mm in diameter. Planar-passivated device
structure.
ABSOLUTE MAXIMUM RATINGS (T=25°C)
PARAMETER
RATING
UNITS
Storage Temperature
-40 to +100
°C
Operating Temperature
-40 to +85
°C
Forward Current
100
mA
Reverse Current
20
mA
Reverse Voltage
2
V
OPTICAL AND ELECTRICAL CHARACTERISTICS (T=25°C)
PARAMETER
SYMBOL
TEST CONDITIONS MIN TYP MAX
λ = 850 nm
0.10 0.20
-
Responsivity
Shunt Resistance
Capacitance
R
λ = 1300 nm
0.80 0.90
-
λ = 1550 nm
0.85 0.95
-
R_S
V_R=0V
2
10
-
C
V_R=0V
-
300 450
Very High Shunt Resistance devices are available upon request.
UNITS
A /W
MΩ
pF
DIMENSIONAL OUTLINE
(dimensions in inches)
1 ANODE
2 CATHODE
3 CASE