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| FCX591TA Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR | |||
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SOT89 PNP SILICON PLANAR MEDIUM
POWER HIGH PERFORMANCE TRANSISTOR
ISSUE 3 - NOVEMBER 1995
7
FCX591
C
PARTMARKING DETAIL - P1
COMPLEMENTARY TYPE - FCX491
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Base Current
IB
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX.
-80
V
-60
V
-5
V
-2
A
-1
A
-200
mA
1
W
-65 to +150
°C
UNIT CONDITIONS.
Breakdown Voltages
Collector Cut-Off Current
Collector -Emitter Cut-Off
Current
V(BR)CBO -80
V(BR)CEO -60
V(BR)EBO -5
ICBO
ICES
V
V
V
-100 nA
-100 nA
IC=-100µA, IE=0
IC=-10mA, IB=0*
IE=-100µA, IC=0
VCB=-60V
VCES=-60V
Emitter Cut-Off Current
Saturation Voltages
IEBO
VCE(sat)
VBE(sat)
Base-Emitter Turn-on Voltage VBE(on)
Static Forward Current Transfer hFE
100
Ratio
100
80
15
Transition Frequency
fT
150
-100
-0.3
-0.6
-1.2
-1.0
300
nA
V
V
V
V
MHz
VEB=-4V, IC=0
IC=-500mA,
IB=-50mA*
IC=-1A, IB=-100mA*
IC=-1A, IB=-100mA*
IC=-1A, VCE=-5V*
IC=-1mA, VCE=-5V*
IC=-500mA, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-2A, VCE=-5V*
IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance
Cobo
10
pF
VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
For typical Characteristics graphs see FMMT591 datasheet
3 - 92
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