EPA120E Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – High Efficiency Heterojunction Power FET

Excelics
EPA120E
DATA SHEET
High Efficiency Heterojunction Power FET
• +29.5dBm TYPICAL OUTPUT POWER
• 9.5dB TYPICAL POWER GAIN AT 18GHz
• 0.3 X 1200 MICRON RECESSED
“MUSHROOM” GATE
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
40
EFFICIENCY, AND HIGH RELIABILITY
• Idss SORTED IN 30mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
830
50 116
D
D
D
D
S _{GS GSGSG} S
95 45 80
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
48
320
100
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN TYP MAX UNIT
P_1dB
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
f=18GHz
28.0 29.5
29.5
dBm
G_1dB
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
10.0 12.0
dB
f=18GHz
9.5
PAE
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
%
46
Idss
Saturated Drain Current Vds=3V, Vgs=0V
210 360 510 mA
Gm
Transconductance
Vds=3V, Vgs=0V
240 380
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=3.5mA
-1.0 -2.5 V
BVgd
Drain Breakdown Voltage Igd=1.2mA
-12 -15
V
BVgs
Source Breakdown Voltage Igs=1.2mA
-7 -14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
35
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS PARAMETERS ABSOLUTE¹ CONTINUOUS²
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-3V
Ids
Drain Current
Idss
405mA
Igsf
Forward Gate Current
60mA
10mA
Pin
Input Power
27dBm
Tch
Channel Temperature
175^oC
Tstg
Storage Temperature
-65/175^oC
@3dB Compression
150^oC
-65/150^oC
Pt
Total Power Dissipation 3.9W
3.2W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com