EPA040A-70 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – High Efficiency Heterojunction Power FET

Excelics
EPA040A-70
DATA SHEET
High Efficiency Heterojunction Power FET
• NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
• +23.5dBm TYPICAL OUTPUT POWER
• 7.0dB TYPICAL POWER GAIN AT 18GHz
• 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL HETEROJUNCTION PROFILE
PROVIDES EXTRA HIGH POWER EFFICIENCY,
AND HIGH RELIABILITY
44
19
20
4
D
S
S
G
All Dimensions In mils.
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN TYP MAX UNIT
P_1dB
Output Power at 1dB Compression
Vds=6V, Ids=50% Idss
f=12GHz
f=18GHz
21.5 23.5
23.5
dBm
G_1dB
Gain at 1dB Compression
Vds=6V, Ids=50% Idss
f=12GHz
f=18GHz
9.0 10.5
7.0
dB
PAE
Power Added Efficiency at 1dB Compression
Vds=6V, Ids=50% Idss
f=12GHz
%
45
Idss
Saturated Drain Current Vds=3V, Vgs=0V
70 120 160 mA
Gm
Transconductance
Vds=3V, Vgs=0V
80 130
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=1.0mA
-1.0 -2.5 V
BVgd
Drain Breakdown Voltage Igd=1.0mA
-9 -15
V
BVgs
Source Breakdown Voltage Igs=1.0mA
Rth
Thermal Resistance
* Overall Rth depends on case mounting.
-6 -14
250^*
V
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS PARAMETERS
ABSOLUTE¹ CONTINUOUS²
Vds
Drain-Source Voltage
10V
6V
Vgs
Gate-Source Voltage
-6V
-3V
Ids
Drain Current
Idss
75mA
Igsf
Forward Gate Current
20mA
3mA
Pin
Input Power
20dBm
@ 3dB Compression
Tch
Channel Temperature
175^oC
150 ^oC
Tstg
Storage Temperature
-65/175^oC
-65/150 ^oC
Pt
Total Power Dissipation
550mW
455mW
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com