EPA030C Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – High Efficiency Heterojunction Power FET

Excelics
EPA030C
DATA SHEET
High Efficiency Heterojunction Power FET
• +23.0dBm TYPICAL OUTPUT POWER
• 11.0dB TYPICAL POWER GAIN AT 18GHz
• 0.3 X 300 MICRON RECESSED “MUSHROOM” GATE
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
• Idss SORTED IN 10mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P_1dB
G_1dB
PAE
Output Power at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
f=18GHz
Gain at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
f=18GHz
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
Idss
Saturated Drain Current Vds=3V, Vgs=0V
Gm
Transconductance
Vds=3V, Vgs=0V
Vp
Pinch-off Voltage
Vds=3V, Ids=1.0mA
BVgd
Drain Breakdown Voltage Igd=1.0mA
BVgs
Source Breakdown Voltage Igs=1.0mA
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
330
50
D
48
320
100
40
SG S
95 45
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
MIN
21.0
12.0
50
TYP
23.0
23.0
13.5
11.0
45
90
MAX UNIT
dBm
dB
%
130 mA
60 95
mS
-1.0 -2.5 V
-11 -15
V
-7 -14
125
V
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS PARAMETERS
ABSOLUTE¹ CONTINUOUS²
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-3V
Ids
Drain Current
Idss
110mA
Igsf
Forward Gate Current
15mA
2.5mA
Pin
Input Power
21dBm
Tch
Channel Temperature
175^oC
Tstg
Storage Temperature
-65/175^oC
@3dB Compression
150^oC
-65/150^oC
Pt
Total Power Dissipation
1.1W
900mW
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com