EPA025A-70 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – High Efficiency Heterojunction Power FET

Excelics
EPA025A-70
DATA SHEET
High Efficiency Heterojunction Power FET
• NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
• +21.5dBm TYPICAL OUTPUT POWER
• 8.0dB TYPICAL POWER GAIN AT 18GHz
• TYPICAL 0.85dB NOISE FIGURE AND 11.0dB
ASSOCIATED GAIN AT 12GHz
• 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL HETEROJUNCTION PROFILE
PROVIDES EXTRA HIGH POWER EFFICIENCY,
AND HIGH RELIABILITY




'
6
6
*
All Dimensions In mils.
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN TYP MAX UNIT
P_1dB
Output Power at 1dB Compression
Vds=6V, Ids=50% Idss
f=12GHz 19.5 21.5
f=18GHz
21.5
dBm
G_1dB
Gain at 1dB Compression
Vds=6V, Ids=50% Idss
f=12GHz 9.5 11.0
f=18GHz
8.0
dB
PAE
Power Added Efficiency at 1dB Compression
Vds=6V, Ids=50% Idss
f=12GHz
47
%
NF
Noise Figure
Vds=2V, Ids=15mA
f=12GHz
0.85
dB
Ga
Associated Gain
Vds=2V, Ids=15mA
f=12GHz
11.0
dB
Idss
Saturated Drain Current Vds=3V, Vgs=0V
40
75
105
mA
Gm
Transconductance
Vds=3V, Vgs=0V
50
80
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=1.0mA
-1.0 -2.5
V
BVgd
Drain Breakdown Voltage Igd=1.0mA
-9
-15
V
BVgs
Source Breakdown Voltage Igs=1.0mA
Rth
Thermal Resistance
* Overall Rth depends on case mounting.
-6
-14
370^*
V
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS
PARAMETERS
ABSOLUTE¹
CONTINUOUS²
Vds
Drain-Source Voltage
10V
6V
Vgs
Gate-Source Voltage
-6V
-3V
Ids
Drain Current
Idss
50mA
Igsf
Forward Gate Current
12mA
2mA
Pin
Input Power
Tch
Channel Temperature
Tstg
Storage Temperature
18dBm
175^oC
-65/175^oC
@ 3dB Compression
150 ^oC
-65/150 ^oC
Pt
Total Power Dissipation
370mW
310mW
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com