EFC120 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Low Distortion GaAs Power FET

Excelics
EFC120B-100F
DATA SHEET
Low Distortion GaAs Power FET
• HERMETIC 100mil CERAMIC FLANGE PACKAGE ^{10 Rad.}
98
30
34
• +28.0dBm TYPICAL OUTPUT POWER
• HIGH BVgd FOR 10V BIAS
• 9.0dB TYPICAL POWER GAIN AT 8GHz
63 Dia.
• 0.3 X 1200 MICRON RECESSED “MUSHROOM”
G
D
GATE
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE
24
98 ⁷⁹
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
256 TYP. 256 TYP.
35
24
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
All Dimensions In mils
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN TYP MAX UNIT
P_1dB
Output Power at 1dB Compression
Vds=10V, Ids=50% Idss
f = 8GHz
f = 12GHz
28.0
26.0 28.0
dBm
G_1dB
Gain at 1dB Compression
Vds=10V, Ids=50% Idss
f = 8GHz
9.0
f = 12GHz 4.0 6.0
dB
PAE
Gain at 1dB Compression
Vds=10V, Ids=50% Idss
f = 12GHz
30
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V
160 260 360 mA
Gm
Transconductance
Vds=3V, Vgs=0V
100 140
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=3.0mA
-2.5 -4.0 V
BVgd
Drain Breakdown Voltage Igd=1.2mA
-15 -20
V
BVgs
Source Breakdown Voltage Igs=1.2mA
-10 -17
V
Rth
Thermal Resistance
43*
*Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25^OC
SYMBOLS PARAMETERS
ABSOLUTE¹
CONTINUOUS²
Vds
Drain-Source Voltage
14V
10V
Vgs
Gate-Source Voltage
-8V
-4.5V
Ids
Drain Current
Idss
270mA
Igsf
Forward Gate Current
30mA
5mA
Pin
Input Power
26dBm
Tch
Channel Temperature
175^oC
@ 3dB Compression
150^oC
Tstg
Storage Temperature
-65/175^oC
-65/150^oC
Pt
Total Power Dissipation
3.2W
2.7W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
o_C/W
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com