EFC060B Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Low Distortion GaAs Power FET

Excelics
EFC060B
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
• +25.0dBm TYPICAL OUTPUT POWER
• 10.5dB TYPICAL POWER GAIN AT 12GHz
• HIGH BVgd FOR 10V BIAS
• 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
• Idss SORTED IN 10mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
SYMBOLS
P_1dB
G_1dB
PAE
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f=12GHz
Vds=10V, Ids=50% Idss
f=18GHz
Gain at 1dB Compression
f=12GHz
Vds=10V, Ids=50% Idss
f=18GHz
Power Added Efficiency at 1dB Compression
Vds=10V, Idss=50% Idss
f=12GHz
Idss
Saturated Drain Current Vds=3V, Vgs=0V
Gm
Transconductance
Vds=3V, Vgs=0V
Vp
Pinch-off Voltage
Vds=3V, Ids=1.5mA
BVgd
Drain Breakdown Voltage Igd=1.0mA
BVgs
Source Breakdown Voltage Igs=1.0mA
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
350
50
D
48
40
SGS
350
100
95 50
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
MIN
23.0
9.0
TYP
25.0
25.0
10.5
8.0
MAX UNIT
dBm
dB
35
%
80 130 180 mA
50 70
mS
-2.5 -4.0 V
-15 -20
V
-10 -17
75
V
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS PARAMETERS
ABSOLUTE¹
CONTINUOUS²
Vds
Drain-Source Voltage
14V
10V
Vgs
Gate-Source Voltage
-8V
-4.5V
Ids
Drain Current
Idss
150mA
Igsf
Forward Gate Current
15mA
2.5mA
Pin
Input Power
23dBm
Tch
Channel Temperature
175^oC
Tstg
Storage Temperature
-65/175^oC
@ 3dB Compression
150^oC
-65/150^oC
Pt
Total Power Dissipation
1.8W
1.5W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com