EFA960B Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Low Distortion GaAs Power FET

Excelics
EFA960B
DATA SHEET
Low Distortion GaAs Power FET
• +36.5dBm TYPICAL OUTPUT POWER
 

• 16.0dB TYPICAL POWER GAIN AT 2GHz
• 0.5 X 9600 MICRON RECESSED
'
'
'
'

“MUSHROOM” GATE
• Si₃N₄ PASSIVATION AND PLATED HEAT SINK
• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,

 ₆ ^* ₆ ^* 6 ^* 6 ^* 6 ^
LINEARITY AND RELIABILITY
  
• Idss SORTED IN 160mA PER BIN RANGE
Chip Thickness: 50 ± 10 microns
(with > 20 microns Gold Plated Heat Sink (PHS) )
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC) ^{All Dimensions In Microns}
SYMBOLS
P_1dB
G_1dB
PAE
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Gain at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f= 2GHz
MIN
35.0
15.0
TYP
36.5
36.5
16.5
11.5
34
MAX UNIT
dBm
dB
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V
1600 2720 3520 mA
Gm
Transconductance
Vds=3V, Vgs=0V
1100 1450
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=25mA
-2.0 -3.5 V
BVgd
Drain Breakdown Voltage Igd=9.6mA
-12 -15
V
BVgs
Rth
Source Breakdown Voltage Igs=9.6mA
Thermal Resistance (Au-Sn Eutectic Attach)
-7 -14
5
V
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS PARAMETERS
ABSOLUTE ¹
CONTINUOUS²
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-4V
Ids
Drain Current
Idss
2.8A
Igsf
Forward Gate Current
240mA
40mA
Pin
Input Power
35dBm
Tch
Channel Temperature
175^oC
Tstg
Storage Temperature
-65/175^oC
@3dB Compression
150^oC
-65/150^oC
Pt
Total Power Dissipation
27 W
23 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com