EFA480B Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Low Distortion GaAs Power FET

Excelics
EFA480B
DATA SHEET
Low Distortion GaAs Power FET
• +34.0dBm TYPICAL OUTPUT POWER
• 10.0dB TYPICAL POWER GAIN AT 8GHz
• 0.5 X 4800 MICRON RECESSED
“MUSHROOM” GATE
• Si₃N₄ PASSIVATION AND PLATED HEAT SINK
• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
40
LINEARITY AND RELIABILITY
• Idss SORTED IN 80mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
960
50 156
D
D
D
D
48
420
110
SG
SG
S
G
S
GS
95
120 45
Chip Thickness: 50 ± 10 microns
(with > 20 microns Gold Plated Heat Sink (PHS) )
All Dimensions In Microns
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN TYP MAX UNIT
P_1dB
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
f = 8GHz
f =12GHz
34.0
32.0 34.0
dBm
G_1dB
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
f = 8GHz
10.0
dB
f =12GHz
4.0 6.0
PAE
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
f =8GHz
35
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V
800 1360 1760 mA
Gm
Transconductance
Vds=3V, Vgs=0V
560 720
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=10mA
-2.0 -3.5 V
BVgd
Drain Breakdown Voltage Igd=4.8mA
-12 -15
V
BVgs
Rth
Source Breakdown Voltage Igs=4.8mA
Thermal Resistance (Au-Sn Eutectic Attach)
-7 -14
10
V
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS PARAMETERS
ABSOLUTE ¹
CONTINUOUS²
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-4V
Ids
Drain Current
Idss
1.4A
Igsf
Forward Gate Current
120mA
20mA
Pin
Input Power
32dBm
Tch
Channel Temperature
175^oC
Tstg
Storage Temperature
-65/175^oC
@3dB Compression
150^oC
-65/150^oC
Pt
Total Power Dissipation
14 W
11 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com