EFA060B-70 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Low Distortion GaAs Power FET

Excelics
EFA060B-70
DATA SHEET
Low Distortion GaAs Power FET
• NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
• +24.0dBm TYPICAL OUTPUT POWER
• 7.5 dB TYPICAL POWER GAIN AT 12GHz
• 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
44
19
20
4
D
S
S
G
All Dimensions In mils.
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN TYP MAX UNIT
P_1dB
Output Power at 1dB Compression
Vds=6V, Ids=50% Idss
f=12GHz
f=18GHz
22.0 24.0
24.0
dBm
G_1dB
Gain at 1dB Compression
Vds=6V, Ids=50% Idss
f=12GHz
f=18GHz
6.0 7.5
5.0
dB
PAE
Power Added Efficiency at 1dB Compression
Vds=6V, Ids=50% Idss
f=12GHz
%
33
Idss
Saturated Drain Current Vds=3V, Vgs=0V
100 170 240 mA
Gm
Transconductance
Vds=3V, Vgs=0V
70 90
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=1.5mA
-2.0 -3.5 V
BVgd
Drain Breakdown Voltage Igd=1.0mA
-10 -15
V
BVgs
Source Breakdown Voltage Igs=1.0mA
Rth
Thermal Resistance
* Overall Rth depends on case mounting.
-6 -14
175^*
V
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS PARAMETERS
ABSOLUTE¹ CONTINUOUS²
Vds
Drain-Source Voltage
10V
6V
Vgs
Gate-Source Voltage
-6V
-4V
Ids
Drain Current
Idss
110mA
Igsf
Forward Gate Current
15mA
2.5mA
Pin
Input Power
22dBm
@ 3dB Compression
Tch
Channel Temperature
175^oC
150 ^oC
Tstg
Storage Temperature
-65/175^oC
-65/150 ^oC
Pt
Total Power Dissipation
780mW
650mW
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com