EFA025AL Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – High Gain GaAs Power FET

Excelics
EFA025AL
DATA SHEET
High Gain GaAs Power FET
• +20.0dBm TYPICAL OUTPUT POWER
• 11.5dB TYPICAL POWER GAIN AT 12GHz
• 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
• Idss SORTED IN 5mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P_1dB
G_1dB
PAE
Output Power at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
f=18GHz
Gain at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
f=18GHz
Power Added efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
Idss
Saturated Drain Current Vds=3V, Vgs=0V
420
50 104
D
40
SG
D
GS
48
260
90
59 50 78
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
MIN
17.0
9.5
20
TYP
20.0
20.0
11.5
9.0
38
45
MAX UNIT
dBm
dB
%
65 mA
Gm
Transconductance
Vds=3V, Vgs=0V
30 50
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=1.0mA
-1.5 -2.5 V
BVgd
Drain Breakdown Voltage Igd=1.0mA
-12 -15
V
BVgs
Rth
Source Breakdown Voltage Igs=1.0mA
Thermal Resistance (Au-Sn Eutectic Attach)
-7 -14
155
V
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS PARAMETERS
ABSOLUTE¹ CONTINUOUS²
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-4V
Ids
Drain Current
Idss
Idss
Igsf
Forward Gate Current
6mA
1mA
Pin
Input Power
19dBm
Tch
Channel Temperature
175^oC
Tstg
Storage Temperature
-65/175^oC
@ 3dB Compression
150^oC
-65/150^oC
Pt
Total Power Dissipation
880mW
730mW
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com